High Performance Normally OFF GaN High Electron Mobility Transistors (HEMT)

Alternative transistors for faster and more efficient power electronics

Challenge

The power electronics industry is looking to transition from silicon-based semiconductors to devices that are higher in voltage, faster and more efficient. Gallium nitride (GaN) -based high electron mobility transistors (HEMT) are recognised as a promising alternative due to their positive and stable threshold voltage, low on-resistance and high breakdown field. Unfortunately, current GaN-HEMTs are only available as Normally ON devices which are not fail-safe and thus have limited market potential.

Proposed Solution

The project seeks to develop a commercially viable Normally OFF fail-safe, lower cost and smaller GaN-HEMT by combing two Australian enabling technologies – BluGlass’ deposition technology called Remote Plasma Chemical Vapour Deposition (RPCVD) a revolutionary low temperature approach for the manufacture of semiconductor materials and Griffith University’s Queensland Microtechnology Facility (QMF) Atomically Smooth SiC on large Si (SiC on Si) wafers.

The combination of these technologies will enable the production of world leading power electronic devices in Australia.If successful this project will deliver:

• World leading enabling technology platform and processes (RPCVD) for the manufacture of GaN
• Commercially viable SiC on Si substrate that addresses manufacturing cost, difficulty in engineering and the IP minefield that is a barrier to wider manufacturing adoption
• Successful low-cost normally OFF HEMT devices grown using RPCVD on SiC on Si wafers combining the BluGlass deposition technology on Griffith atomically smooth substrates
• Established foundry business (BluGlass) providing high-value contract manufacturing for global electronics manufacturers